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MSCSM170SKM23CT1AG
Full SiC MOSFET 1700V / 98A - Buck chopper
!_prilohy_!:
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| ID Code: | 186231 |
| Hersteller: | Microchip Technology |
| Preis inkl. MwSt. : | 177,6273 € |
| Preis ohne MwSt. : | 146,7994 € |
| MwSt.: | 21 % |
| Verfügbarkeit: | Bestellt |
| Gesamtbestand: | 0 Stück |
| Herstellerkennzeichnung: | MSCSM170SKM23CT1AG |
| Zentrallager Zdice: | 0 Stück |
| Einheit:: | Stück |
| !_prehled mnozstevnich slev_! | Anzahl | Preis ohne MwSt. | Preis inkl. MwSt. | |
| 1 + | 146,7994 € | 177,6273 € | ||
| 3 + | 144,7673 € | 175,1685 € | ||
| 5 + | 143,7513 € | 173,9390 € | ||
| 10 + | 142,7352 € | 172,7096 € |
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Grundlegende Informationen:
| Herstellerkennzeichnung | MSCSM170SKM23CT1AG |
| Art der Komponente: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Konfiguration: | High side 1*(Buck Chopper) |
| Spezifikationen: | !_sic n-channel mosfet_! |
| Konstruktion: | 1*FET-BD+1*D |
| Art des Materials: | !_sic full_! |
| RoHS | Ja |
| REACH | Nein |
| Gehäusetyp: | MODUL |
| Gehäuse: | !_sp1f_! |
| NOVINKA | A |
| RoHS1 | Ano |
Verpackung und Gewicht:
| Einheit: | Stück |
| Gewicht: | 96 [g] |
| Verpackungstyp: | TUBE |
| Kleinpackung (Anzahl der Einheiten): | 7 |
Elektrophysikalische Parameter:
| Udc (URRM, UCEO, Umax) | 1700 [V] |
| Idc max (Tc/Ta=25÷160°C) | 124 [A] |
| Idc max (Tc/Ta=25°C) | 124 [A] |
| Idc max (Tc/Ta=80÷89°C) | 98 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 602 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 22.5 [mΩ] |
| trr Wiederherstellungszeit (If=Inom.,@25°C) | 27 [ns] |
| tr (Turn-on / rise time) | 17 [ns] |
| tf (turn-off=fall time) | 19 [ns] |
| Qg (Total Gate Charge) | 356 [nC] |
| Cin/CL Load Capacitance | 6600 pF |
Thermische und mechanische Parameter:
| Tmin (minimale Arbeitstemperatur) | -40 [°C] |
| Tmax (maximale Arbeitstemperatur) | 150 [°C] |
| Rthjc1 IGBT | 0.25 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.276 [°C/W] |
| RM - Anschlussraster | 3.8 [mm] |
| RM1 - Abstand der Reihen | 38 [mm] |
| W - Breite | 42.5 [mm] |
| L - Länge | 51.6 [mm] |
| H - Höhe | 12 [mm] |
| Rozměry/Velikost (LxWxH) | 52x43x12 [mm] |
| Abmessungen der Anschlüsse | 1,4 [mm] |
| Lv - Anschlusslänge | 5.8 [mm] |